3sk41 Datasheet Today

: The dual-gate structure allows one gate to receive the RF signal and the other to receive the Local Oscillator (LO) signal, resulting in efficient mixing.

For detailed electrical curves and thermal ratings, you can access the full PDF through specialized component distributors: View technical drawings and stock at Jotrin Electronics .

): The negative voltage required on Gate 1 to completely shut down the drain current. Typically ranges between -0.5V and -2.5V. Gate 2 Cut-off Voltage ( 3sk41 datasheet

Direct high-performance N-channel dual-gate MOSFETs.

Here’s a concise summary of the 3SK41 MOSFET's key specifications and typical datasheet details: : The dual-gate structure allows one gate to

Unlike single-gate MOSFETs, the dual-gate structure allows for a second gate ( G2cap G sub 2

: Enables easy implementation of AGC or mixing. 2. Technical Specifications and Electrical Characteristics Typically ranges between -0

In superheterodyne receiver circuits, the 3SK41 operates as a low-noise mixer. The RF signal is fed to G1cap G sub 1 , while the local oscillator (LO) frequency drives G2cap G sub 2

The classic application from the is a cascode-like RF amplifier. Unlike a single-gate MOSFET, Gate 2 acts as a shield and a gain control.

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is a high-frequency Silicon N-Channel Dual-Gate MOSFET primarily used in VHF amplifier and mixer applications. Manufactured by companies like NEC, Hitachi, and Motorola